Cargando…

Crystallinity Effect on Electrical Properties of PEALD–HfO(2) Thin Films Prepared by Different Substrate Temperatures

Hafnium oxide (HfO(2)) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO(2) films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle,...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhang, Xiao-Ying, Han, Jing, Peng, Duan-Chen, Ruan, Yu-Jiao, Wu, Wan-Yu, Wuu, Dong-Sing, Huang, Chien-Jung, Lien, Shui-Yang, Zhu, Wen-Zhang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656191/ https://www.ncbi.nlm.nih.gov/pubmed/36364666 http://dx.doi.org/10.3390/nano12213890

Ejemplares similares

Properties and Mechanism of PEALD-In(2)O(3) Thin Films Prepared by Different Precursor Reaction Energy
por: Zhao, Ming-Jie, et al.
Publicado: (2021)

Resistive Switching Characteristics of HfO(2) Thin Films on Mica Substrates Prepared by Sol-Gel Process
por: Liu, Chao-Feng, et al.
Publicado: (2019)

Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
por: Zhang, Xiao-Ying, et al.
Publicado: (2017)

Effect of Ag Concentration Dispersed in HfO(x) Thin Films on Threshold Switching
por: Jeong, Won Hee, et al.
Publicado: (2020)

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity
por: Liu, Sanjie, et al.
Publicado: (2017)

Mesoscopic-scale grain formation in HfO(2)-based ferroelectric thin films and its impact on electrical characteristics
por: Kobayashi, Masaharu, et al.
Publicado: (2022)

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films
por: Puźniak, Mirosław, et al.
Publicado: (2023)

A Multi-level Memristor Based on Al-Doped HfO(2) Thin Film
por: Wu, Lei, et al.
Publicado: (2019)

Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films
por: Song, Tingfeng, et al.
Publicado: (2021)

Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
por: Jiang, Ran, et al.
Publicado: (2017)

On the switching dynamics of epitaxial ferroelectric CeO(2)–HfO(2) thin film capacitors
por: Cüppers, Felix, et al.
Publicado: (2022)

Structural, Optical and Electrical Properties of HfO(2) Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition
por: Kim, Kyoung-Mun, et al.
Publicado: (2020)

Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
por: Zhang, Xiao-Ying, et al.
Publicado: (2019)

Enhanced ferroelectric switching speed of Si-doped HfO(2) thin film tailored by oxygen deficiency
por: Lee, Kyoungjun, et al.
Publicado: (2021)

All-Water-Driven High-k HfO(2) Gate Dielectrics and Applications in Thin Film Transistors
por: Alam, Fakhari, et al.
Publicado: (2023)

Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO(2) Thin Films
por: Xi, Yingxue, et al.
Publicado: (2023)

Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse
por: Tan, Tingting, et al.
Publicado: (2018)

Effect of Substrate Negative Bias on the Microstructural, Optical, Mechanical, and Laser Damage Resistance Properties of HfO(2) Thin Films Grown by DC Reactive Magnetron Sputtering
por: Xi, Yingxue, et al.
Publicado: (2023)

Effect of Microwave Annealing on the Sensing Characteristics of HfO(2) Thin Film for High Sensitive pH-EGFET Sensor
por: Cui, Siwei, et al.
Publicado: (2023)

Uniformity of HfO(2) Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
por: Choi, Boyun, et al.
Publicado: (2022)

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO(2) film
por: Shimizu, Takao, et al.
Publicado: (2016)

High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO(2) Thin Film with Non-Identical Pulse Waveforms
por: Lee, Ke-Jing, et al.
Publicado: (2022)

Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
por: Shi, Qiuwei, et al.
Publicado: (2022)

Influence of NF(3) Plasma-Treated HfO(2) Gate Insulator Surface on Tin Oxide Thin-Film Transistors
por: Avis, Christophe, et al.
Publicado: (2023)

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO(2) Gate Dielectrics by CF(4) Plasma Treatment
por: Fan, Ching-Lin, et al.
Publicado: (2018)

Synthesis of freestanding HfO(2 )nanostructures
por: Kidd, Timothy, et al.
Publicado: (2011)

Atomic layer deposition for fabrication of HfO(2)/Al(2)O(3) thin films with high laser-induced damage thresholds
por: Wei, Yaowei, et al.
Publicado: (2015)

Mesostructured HfO(2)/Al(2)O(3) Composite Thin Films with Reduced Leakage Current for Ion-Conducting Devices
por: Zakaria, Mohamed Barakat, et al.
Publicado: (2019)

Characterization of Structural, Optical, Corrosion, and Mechanical Properties of HfO(2) Thin Films Deposited Using Pulsed DC Magnetron Sputtering
por: Mańkowska, Ewa, et al.
Publicado: (2023)

HF etched glass substrates for improved thin-film solar cells
por: Park, Hyeongsik, et al.
Publicado: (2018)

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures
por: Xu, Yuan-Dong, et al.
Publicado: (2022)

Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
por: Zhang, Wei, et al.
Publicado: (2017)

Compact Ga(2)O(3) Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature
por: Yang, Yue, et al.
Publicado: (2022)

Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO(2)/SiON Gate Stack
por: Chen, Yung-Yu
Publicado: (2014)

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO(2) Film
por: Peng, Yue, et al.
Publicado: (2022)

Atomic Layer Deposition of HfO(2) Films Using TDMAH and Water or Ammonia Water
por: Gieraltowska, Sylwia, et al.
Publicado: (2023)

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO(2)-based ferroelectric thin film
por: Cheng, Yan, et al.
Publicado: (2022)

Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnO(x) Films at Different Substrate Temperatures
por: Huang, Pao-Hsun, et al.
Publicado: (2022)

High-throughput growth of HfO(2) films using temperature-gradient laser chemical vapor deposition
por: Tu, Rong, et al.
Publicado: (2022)

Enhancing Photoluminescence Intensity and Spectral Bandwidth of Hybrid Nanofiber/Thin-Film Multilayer Tm(3+)-Doped SiO(2)–HfO(2)
por: Zulfikri, Nurul Izzati Zafirah, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_7l1b0dnhkqv2q8n23jmpm8483p