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Reliability Analysis of AlGaN-Based Deep UV-LEDs
The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220–240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep UV-LEDs is highly demanding for mass adoption. Over the last two decades, several rese...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9657871/ https://www.ncbi.nlm.nih.gov/pubmed/36364507 http://dx.doi.org/10.3390/nano12213731 |
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author | Maraj, Mudassar Min, Li Sun, Wenhong |
author_facet | Maraj, Mudassar Min, Li Sun, Wenhong |
author_sort | Maraj, Mudassar |
collection | PubMed |
description | The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220–240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep UV-LEDs is highly demanding for mass adoption. Over the last two decades, several research groups have worked out that the optical power of GaN-based LEDs significantly decreases during operation, and with the passage of time, many mechanisms responsible for the degradation of such devices start playing their roles. Only a few attempts, to explore the reliability of these LEDs, have been presented so far which provide very little information on the output power degradation of these LEDs with the passage of time. Therefore, the aim of this review is to summarize the degradation factors of AlGaN-based near UV-LEDs emitting in the range of 200–350 nm by means of combined optical and electrical characterization so that work groups may have an idea of the issues raised to date and to achieve a wavelength range needed for disinfecting the environment from SARS-CoV-2. The performance of devices submitted to different stress conditions has been reviewed for the reliability of AlGaN-based UV-LEDs based on the work of different research groups so far, according to our knowledge. In particular, we review: (1) fabrication strategies to improve the efficiency of UV-LEDs; (2) the intensity of variation under constant current stress for different durations; (3) creation of the defects that cause the degradation of LED performance; (4) effect of degradation on C-V characteristics of such LEDs; (5) I-V behavior variation under stress; (6) different structural schemes to enhance the reliability of LEDs; (7) reliability of LEDs ranging from 220–240 nm; and (8) degradation measurement strategies. Finally, concluding remarks for future research to enhance the reliability of near UV-LEDs is presented. This draft presents a comprehensive review for industry and academic research on the physical properties of an AlGaN near UV-LEDs that are affected by aging to help LED manufacturers and end users to construct and utilize such LEDs effectively and provide the community a better life standard. |
format | Online Article Text |
id | pubmed-9657871 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96578712022-11-15 Reliability Analysis of AlGaN-Based Deep UV-LEDs Maraj, Mudassar Min, Li Sun, Wenhong Nanomaterials (Basel) Review The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220–240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep UV-LEDs is highly demanding for mass adoption. Over the last two decades, several research groups have worked out that the optical power of GaN-based LEDs significantly decreases during operation, and with the passage of time, many mechanisms responsible for the degradation of such devices start playing their roles. Only a few attempts, to explore the reliability of these LEDs, have been presented so far which provide very little information on the output power degradation of these LEDs with the passage of time. Therefore, the aim of this review is to summarize the degradation factors of AlGaN-based near UV-LEDs emitting in the range of 200–350 nm by means of combined optical and electrical characterization so that work groups may have an idea of the issues raised to date and to achieve a wavelength range needed for disinfecting the environment from SARS-CoV-2. The performance of devices submitted to different stress conditions has been reviewed for the reliability of AlGaN-based UV-LEDs based on the work of different research groups so far, according to our knowledge. In particular, we review: (1) fabrication strategies to improve the efficiency of UV-LEDs; (2) the intensity of variation under constant current stress for different durations; (3) creation of the defects that cause the degradation of LED performance; (4) effect of degradation on C-V characteristics of such LEDs; (5) I-V behavior variation under stress; (6) different structural schemes to enhance the reliability of LEDs; (7) reliability of LEDs ranging from 220–240 nm; and (8) degradation measurement strategies. Finally, concluding remarks for future research to enhance the reliability of near UV-LEDs is presented. This draft presents a comprehensive review for industry and academic research on the physical properties of an AlGaN near UV-LEDs that are affected by aging to help LED manufacturers and end users to construct and utilize such LEDs effectively and provide the community a better life standard. MDPI 2022-10-24 /pmc/articles/PMC9657871/ /pubmed/36364507 http://dx.doi.org/10.3390/nano12213731 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Maraj, Mudassar Min, Li Sun, Wenhong Reliability Analysis of AlGaN-Based Deep UV-LEDs |
title | Reliability Analysis of AlGaN-Based Deep UV-LEDs |
title_full | Reliability Analysis of AlGaN-Based Deep UV-LEDs |
title_fullStr | Reliability Analysis of AlGaN-Based Deep UV-LEDs |
title_full_unstemmed | Reliability Analysis of AlGaN-Based Deep UV-LEDs |
title_short | Reliability Analysis of AlGaN-Based Deep UV-LEDs |
title_sort | reliability analysis of algan-based deep uv-leds |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9657871/ https://www.ncbi.nlm.nih.gov/pubmed/36364507 http://dx.doi.org/10.3390/nano12213731 |
work_keys_str_mv | AT marajmudassar reliabilityanalysisofalganbaseddeepuvleds AT minli reliabilityanalysisofalganbaseddeepuvleds AT sunwenhong reliabilityanalysisofalganbaseddeepuvleds |