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Photoluminescence Intensity Enhancement in Tin Halide Perovskites
The prevalence of background hole doping in tin halide perovskites usually dominates their recombination dynamics. The addition of excess Sn halide source to the precursor solution is the most frequently used approach to reduce the hole doping and reveals photo‐carrier dynamics related to defects ac...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9661860/ https://www.ncbi.nlm.nih.gov/pubmed/36109174 http://dx.doi.org/10.1002/advs.202202795 |
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author | Poli, Isabella Ambrosio, Francesco Treglia, Antonella Berger, Felix J. Prato, Mirko Albaqami, Munirah D. De Angelis, Filippo Petrozza, Annamaria |
author_facet | Poli, Isabella Ambrosio, Francesco Treglia, Antonella Berger, Felix J. Prato, Mirko Albaqami, Munirah D. De Angelis, Filippo Petrozza, Annamaria |
author_sort | Poli, Isabella |
collection | PubMed |
description | The prevalence of background hole doping in tin halide perovskites usually dominates their recombination dynamics. The addition of excess Sn halide source to the precursor solution is the most frequently used approach to reduce the hole doping and reveals photo‐carrier dynamics related to defects activity. This study presents an experimental and theoretical investigation on defects under light irradiation in tin halide perovskites by combining measurements of photoluminescence with first principles computational modeling. It finds that tin perovskite thin films prepared with an excess of Sn halide sources exhibit an enhancement of the photoluminescence intensity over time under continuous excitation in inert atmosphere. The authors propose a model in which light irradiation promotes the annihilation of V(Sn) (2−)/Sn(i) (2+) Frenkel pairs, reducing the deep carrier trapping centers associated with such defect and increasing the radiative recombination. Importantly, these observations can be traced in the open‐circuit voltage dynamics of tin‐based halide perovskite solar cells, implying the relevance of controlling the Sn photochemistry to stabilize tin perovskite devices. |
format | Online Article Text |
id | pubmed-9661860 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-96618602022-11-14 Photoluminescence Intensity Enhancement in Tin Halide Perovskites Poli, Isabella Ambrosio, Francesco Treglia, Antonella Berger, Felix J. Prato, Mirko Albaqami, Munirah D. De Angelis, Filippo Petrozza, Annamaria Adv Sci (Weinh) Research Articles The prevalence of background hole doping in tin halide perovskites usually dominates their recombination dynamics. The addition of excess Sn halide source to the precursor solution is the most frequently used approach to reduce the hole doping and reveals photo‐carrier dynamics related to defects activity. This study presents an experimental and theoretical investigation on defects under light irradiation in tin halide perovskites by combining measurements of photoluminescence with first principles computational modeling. It finds that tin perovskite thin films prepared with an excess of Sn halide sources exhibit an enhancement of the photoluminescence intensity over time under continuous excitation in inert atmosphere. The authors propose a model in which light irradiation promotes the annihilation of V(Sn) (2−)/Sn(i) (2+) Frenkel pairs, reducing the deep carrier trapping centers associated with such defect and increasing the radiative recombination. Importantly, these observations can be traced in the open‐circuit voltage dynamics of tin‐based halide perovskite solar cells, implying the relevance of controlling the Sn photochemistry to stabilize tin perovskite devices. John Wiley and Sons Inc. 2022-09-15 /pmc/articles/PMC9661860/ /pubmed/36109174 http://dx.doi.org/10.1002/advs.202202795 Text en © 2022 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Articles Poli, Isabella Ambrosio, Francesco Treglia, Antonella Berger, Felix J. Prato, Mirko Albaqami, Munirah D. De Angelis, Filippo Petrozza, Annamaria Photoluminescence Intensity Enhancement in Tin Halide Perovskites |
title | Photoluminescence Intensity Enhancement in Tin Halide Perovskites |
title_full | Photoluminescence Intensity Enhancement in Tin Halide Perovskites |
title_fullStr | Photoluminescence Intensity Enhancement in Tin Halide Perovskites |
title_full_unstemmed | Photoluminescence Intensity Enhancement in Tin Halide Perovskites |
title_short | Photoluminescence Intensity Enhancement in Tin Halide Perovskites |
title_sort | photoluminescence intensity enhancement in tin halide perovskites |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9661860/ https://www.ncbi.nlm.nih.gov/pubmed/36109174 http://dx.doi.org/10.1002/advs.202202795 |
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