Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous GaN layer is fabricat...

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Detalles Bibliográficos
Autores principales: Park, Ah Hyun, Baek, Seungjae, Kim, Young Won, Chandramohan, S., Suh, Eun-Kyung, Seo, Tae Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2022
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9671350/
https://www.ncbi.nlm.nih.gov/pubmed/36395163
http://dx.doi.org/10.1371/journal.pone.0277667

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9671350/
https://www.ncbi.nlm.nih.gov/pubmed/36395163
http://dx.doi.org/10.1371/journal.pone.0277667

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