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Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous GaN layer is fabricat...
Autores principales: | Park, Ah Hyun, Baek, Seungjae, Kim, Young Won, Chandramohan, S., Suh, Eun-Kyung, Seo, Tae Hoon |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Public Library of Science
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9671350/ https://www.ncbi.nlm.nih.gov/pubmed/36395163 http://dx.doi.org/10.1371/journal.pone.0277667 |
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