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Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory
Magnetic tunnel junction (MTJ)-based memory devices have larger switching delay and energy consumption, compared to cache or dynamic random access memory. In order to broaden the applications of the magnetoresistive random access memory, reducing the switching time and energy consumption of the MTJ...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9672124/ https://www.ncbi.nlm.nih.gov/pubmed/36396769 http://dx.doi.org/10.1038/s41598-022-24075-y |