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Strain engineering of graphene on rigid substrates

Graphene with a large tensile strain is a promising candidate for the new “straintronics'’ applications. The current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates. In this work, a novel method for strained graphene on a rigid substrate assiste...

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Autores principales: Zhang, Yang, Jin, Yanhan, Liu, Jinglan, Ren, Qiancheng, Chen, Zhengyang, Zhao, Yi, Zhao, Pei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9680924/
https://www.ncbi.nlm.nih.gov/pubmed/36504754
http://dx.doi.org/10.1039/d2na00580h
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author Zhang, Yang
Jin, Yanhan
Liu, Jinglan
Ren, Qiancheng
Chen, Zhengyang
Zhao, Yi
Zhao, Pei
author_facet Zhang, Yang
Jin, Yanhan
Liu, Jinglan
Ren, Qiancheng
Chen, Zhengyang
Zhao, Yi
Zhao, Pei
author_sort Zhang, Yang
collection PubMed
description Graphene with a large tensile strain is a promising candidate for the new “straintronics'’ applications. The current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates. In this work, a novel method for strained graphene on a rigid substrate assisted by PDMS stretching and interface adjustments is proposed. The Raman spectra show that the maximum strain of graphene on the SiO(2)/Si substrate is ∼1.5%, and multiple characterizations demonstrate its high cleanness, flatness, integrity, and reliable electrical performance. The successful strain engineering is attributed to the protection of a layer of formvar resin and the interfacial capillary force of the buffering liquid. We believe this technique can advance strain-related fundamental studies and applications of two-dimensional materials.
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spelling pubmed-96809242022-12-08 Strain engineering of graphene on rigid substrates Zhang, Yang Jin, Yanhan Liu, Jinglan Ren, Qiancheng Chen, Zhengyang Zhao, Yi Zhao, Pei Nanoscale Adv Chemistry Graphene with a large tensile strain is a promising candidate for the new “straintronics'’ applications. The current approaches of strain engineering on graphene are mainly realized by flexible or hollow substrates. In this work, a novel method for strained graphene on a rigid substrate assisted by PDMS stretching and interface adjustments is proposed. The Raman spectra show that the maximum strain of graphene on the SiO(2)/Si substrate is ∼1.5%, and multiple characterizations demonstrate its high cleanness, flatness, integrity, and reliable electrical performance. The successful strain engineering is attributed to the protection of a layer of formvar resin and the interfacial capillary force of the buffering liquid. We believe this technique can advance strain-related fundamental studies and applications of two-dimensional materials. RSC 2022-10-12 /pmc/articles/PMC9680924/ /pubmed/36504754 http://dx.doi.org/10.1039/d2na00580h Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Zhang, Yang
Jin, Yanhan
Liu, Jinglan
Ren, Qiancheng
Chen, Zhengyang
Zhao, Yi
Zhao, Pei
Strain engineering of graphene on rigid substrates
title Strain engineering of graphene on rigid substrates
title_full Strain engineering of graphene on rigid substrates
title_fullStr Strain engineering of graphene on rigid substrates
title_full_unstemmed Strain engineering of graphene on rigid substrates
title_short Strain engineering of graphene on rigid substrates
title_sort strain engineering of graphene on rigid substrates
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9680924/
https://www.ncbi.nlm.nih.gov/pubmed/36504754
http://dx.doi.org/10.1039/d2na00580h
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