Giant tunneling magnetoresistance in two-dimensional magnetic tunnel junctions based on double transition metal MXene ScCr(2)C(2)F(2)

Two-dimensional (2D) transition metal carbides (MXenes) with intrinsic magnetism and half-metallic features show great promising applications for spintronic and magnetic devices, for instance, achieving perfect spin-filtering in van der Waals (vdW) magnetic tunnel junctions (MTJs). Herein, combining density functional theory calculations and nonequilibrium Green's function simulations, we systematically investigated the spin-dependent transport properties of 2D double transition metal MXene ScCr(2)C(2)F(2)-based vdW MTJs, where ScCr(2)C(2)F(2) acts as the spin-filter tunnel barriers, 1T-MoS(2) acts as the electrode and 2H-MoS(2) as the tunnel barrier. We found that the spin-up electrons in the parallel configuration state play a decisive role in the transmission behavior. We found that all the constructed MTJs could hold large tunnel magnetoresistance (TMR) ratios over 9 × 10(5)%. Especially, the maximum giant TMR ratio of 6.95 × 10(6)% can be found in the vdW MTJ with trilayer 2H-MoS(2) as the tunnel barrier. These results indicate the potential for spintronic applications of vdW MTJs based on 2D double transition metal MXene ScCr(2)C(2)F(2).