Cargando…

Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots

Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such n...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Lu, Zhang, Yukai, Zhang, Peng, Wen, Dianzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695640/
https://www.ncbi.nlm.nih.gov/pubmed/36432261
http://dx.doi.org/10.3390/nano12223976
_version_ 1784838112327761920
author Wang, Lu
Zhang, Yukai
Zhang, Peng
Wen, Dianzhong
author_facet Wang, Lu
Zhang, Yukai
Zhang, Peng
Wen, Dianzhong
author_sort Wang, Lu
collection PubMed
description Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such nonvolatile memory devices have write-once-read-many electrical properties and a concentrated distribution of low-resistance and high-resistance states. It provides a solution for the current obstacle of resistive memory storage and computing integration. Based on the sensitivity of the device to ultraviolet light, the “OR gate” logic operation is completed. Furthermore, the active layer can be dissolved in deionized water within 15 min, and the gelatin substrate-based device can be destroyed immediately in water, indicating the potential biodegradation and physical transient properties of our fabricated device. Biocompatible memory devices are environmentally friendly, sustainable for safe storage, and low-cost, making them ideal for storage applications.
format Online
Article
Text
id pubmed-9695640
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-96956402022-11-26 Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots Wang, Lu Zhang, Yukai Zhang, Peng Wen, Dianzhong Nanomaterials (Basel) Article Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such nonvolatile memory devices have write-once-read-many electrical properties and a concentrated distribution of low-resistance and high-resistance states. It provides a solution for the current obstacle of resistive memory storage and computing integration. Based on the sensitivity of the device to ultraviolet light, the “OR gate” logic operation is completed. Furthermore, the active layer can be dissolved in deionized water within 15 min, and the gelatin substrate-based device can be destroyed immediately in water, indicating the potential biodegradation and physical transient properties of our fabricated device. Biocompatible memory devices are environmentally friendly, sustainable for safe storage, and low-cost, making them ideal for storage applications. MDPI 2022-11-11 /pmc/articles/PMC9695640/ /pubmed/36432261 http://dx.doi.org/10.3390/nano12223976 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Lu
Zhang, Yukai
Zhang, Peng
Wen, Dianzhong
Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
title Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
title_full Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
title_fullStr Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
title_full_unstemmed Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
title_short Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
title_sort physical transient photoresistive variable memory based on graphene quantum dots
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695640/
https://www.ncbi.nlm.nih.gov/pubmed/36432261
http://dx.doi.org/10.3390/nano12223976
work_keys_str_mv AT wanglu physicaltransientphotoresistivevariablememorybasedongraphenequantumdots
AT zhangyukai physicaltransientphotoresistivevariablememorybasedongraphenequantumdots
AT zhangpeng physicaltransientphotoresistivevariablememorybasedongraphenequantumdots
AT wendianzhong physicaltransientphotoresistivevariablememorybasedongraphenequantumdots