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Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such n...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695640/ https://www.ncbi.nlm.nih.gov/pubmed/36432261 http://dx.doi.org/10.3390/nano12223976 |
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author | Wang, Lu Zhang, Yukai Zhang, Peng Wen, Dianzhong |
author_facet | Wang, Lu Zhang, Yukai Zhang, Peng Wen, Dianzhong |
author_sort | Wang, Lu |
collection | PubMed |
description | Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such nonvolatile memory devices have write-once-read-many electrical properties and a concentrated distribution of low-resistance and high-resistance states. It provides a solution for the current obstacle of resistive memory storage and computing integration. Based on the sensitivity of the device to ultraviolet light, the “OR gate” logic operation is completed. Furthermore, the active layer can be dissolved in deionized water within 15 min, and the gelatin substrate-based device can be destroyed immediately in water, indicating the potential biodegradation and physical transient properties of our fabricated device. Biocompatible memory devices are environmentally friendly, sustainable for safe storage, and low-cost, making them ideal for storage applications. |
format | Online Article Text |
id | pubmed-9695640 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96956402022-11-26 Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots Wang, Lu Zhang, Yukai Zhang, Peng Wen, Dianzhong Nanomaterials (Basel) Article Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such nonvolatile memory devices have write-once-read-many electrical properties and a concentrated distribution of low-resistance and high-resistance states. It provides a solution for the current obstacle of resistive memory storage and computing integration. Based on the sensitivity of the device to ultraviolet light, the “OR gate” logic operation is completed. Furthermore, the active layer can be dissolved in deionized water within 15 min, and the gelatin substrate-based device can be destroyed immediately in water, indicating the potential biodegradation and physical transient properties of our fabricated device. Biocompatible memory devices are environmentally friendly, sustainable for safe storage, and low-cost, making them ideal for storage applications. MDPI 2022-11-11 /pmc/articles/PMC9695640/ /pubmed/36432261 http://dx.doi.org/10.3390/nano12223976 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Wang, Lu Zhang, Yukai Zhang, Peng Wen, Dianzhong Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots |
title | Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots |
title_full | Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots |
title_fullStr | Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots |
title_full_unstemmed | Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots |
title_short | Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots |
title_sort | physical transient photoresistive variable memory based on graphene quantum dots |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695640/ https://www.ncbi.nlm.nih.gov/pubmed/36432261 http://dx.doi.org/10.3390/nano12223976 |
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