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Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes

In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-Si(1−x)C(x):H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the s...

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Autores principales: Meneses-Meneses, Maricela, Moreno-Moreno, Mario, Morales-Sánchez, Alfredo, Ponce-Pedraza, Arturo, Flores-Méndez, Javier, Mendoza-Cervantes, Julio César, Palacios-Huerta, Liliana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696331/
https://www.ncbi.nlm.nih.gov/pubmed/36363969
http://dx.doi.org/10.3390/mi13111948
_version_ 1784838284416909312
author Meneses-Meneses, Maricela
Moreno-Moreno, Mario
Morales-Sánchez, Alfredo
Ponce-Pedraza, Arturo
Flores-Méndez, Javier
Mendoza-Cervantes, Julio César
Palacios-Huerta, Liliana
author_facet Meneses-Meneses, Maricela
Moreno-Moreno, Mario
Morales-Sánchez, Alfredo
Ponce-Pedraza, Arturo
Flores-Méndez, Javier
Mendoza-Cervantes, Julio César
Palacios-Huerta, Liliana
author_sort Meneses-Meneses, Maricela
collection PubMed
description In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-Si(1−x)C(x):H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the same c-Si wafer, containing transistors, sensors, LEDs and waveguides. Two different heterojunction LEDs were fabricated consisting of PIN and PIN(+)N structures, where a-Si(1−x)C(x):H thin films were used as P-type and I-type layers, while an N-type c-Si substrate was used as an active part of the device. The amorphous layers were deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique at a substrate temperature of 200 °C. The PIN device presented electroluminescence (EL) only in the forward bias, while the PIN(+)N device presented in both the forward and reverse biases. The EL in reverse bias was possible due to the addition of an N(+)-type a-Si:H layer between the c-Si substrate and the I-type a-Si(1−x)C(x):H active layer. Likewise, the EL intensity of the PIN(+)N structure was higher than that of the PIN device in forward bias, indicating that the addition of the N-type a-Si:H layer makes electrons flow more efficiently to the I layer. In addition, both devices presented red EL in the full area, which is observed with the naked eye.
format Online
Article
Text
id pubmed-9696331
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-96963312022-11-26 Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes Meneses-Meneses, Maricela Moreno-Moreno, Mario Morales-Sánchez, Alfredo Ponce-Pedraza, Arturo Flores-Méndez, Javier Mendoza-Cervantes, Julio César Palacios-Huerta, Liliana Micromachines (Basel) Article In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-Si(1−x)C(x):H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the same c-Si wafer, containing transistors, sensors, LEDs and waveguides. Two different heterojunction LEDs were fabricated consisting of PIN and PIN(+)N structures, where a-Si(1−x)C(x):H thin films were used as P-type and I-type layers, while an N-type c-Si substrate was used as an active part of the device. The amorphous layers were deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique at a substrate temperature of 200 °C. The PIN device presented electroluminescence (EL) only in the forward bias, while the PIN(+)N device presented in both the forward and reverse biases. The EL in reverse bias was possible due to the addition of an N(+)-type a-Si:H layer between the c-Si substrate and the I-type a-Si(1−x)C(x):H active layer. Likewise, the EL intensity of the PIN(+)N structure was higher than that of the PIN device in forward bias, indicating that the addition of the N-type a-Si:H layer makes electrons flow more efficiently to the I layer. In addition, both devices presented red EL in the full area, which is observed with the naked eye. MDPI 2022-11-10 /pmc/articles/PMC9696331/ /pubmed/36363969 http://dx.doi.org/10.3390/mi13111948 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Meneses-Meneses, Maricela
Moreno-Moreno, Mario
Morales-Sánchez, Alfredo
Ponce-Pedraza, Arturo
Flores-Méndez, Javier
Mendoza-Cervantes, Julio César
Palacios-Huerta, Liliana
Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes
title Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes
title_full Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes
title_fullStr Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes
title_full_unstemmed Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes
title_short Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes
title_sort development of heterojunction c-si/a-si(1−x)c(x):h pin light-emitting diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696331/
https://www.ncbi.nlm.nih.gov/pubmed/36363969
http://dx.doi.org/10.3390/mi13111948
work_keys_str_mv AT menesesmenesesmaricela developmentofheterojunctioncsiasi1xcxhpinlightemittingdiodes
AT morenomorenomario developmentofheterojunctioncsiasi1xcxhpinlightemittingdiodes
AT moralessanchezalfredo developmentofheterojunctioncsiasi1xcxhpinlightemittingdiodes
AT poncepedrazaarturo developmentofheterojunctioncsiasi1xcxhpinlightemittingdiodes
AT floresmendezjavier developmentofheterojunctioncsiasi1xcxhpinlightemittingdiodes
AT mendozacervantesjuliocesar developmentofheterojunctioncsiasi1xcxhpinlightemittingdiodes
AT palacioshuertaliliana developmentofheterojunctioncsiasi1xcxhpinlightemittingdiodes