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Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes

In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-Si(1−x)C(x):H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the s...

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Detalles Bibliográficos
Autores principales:	Meneses-Meneses, Maricela, Moreno-Moreno, Mario, Morales-Sánchez, Alfredo, Ponce-Pedraza, Arturo, Flores-Méndez, Javier, Mendoza-Cervantes, Julio César, Palacios-Huerta, Liliana
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696331/ https://www.ncbi.nlm.nih.gov/pubmed/36363969 http://dx.doi.org/10.3390/mi13111948

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