Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior

A metal–insulator–metal-structured Ag-filament-based transparent threshold switch is developed as a selector device for a crossbar array, which can lead to high-density integration of advanced memory devices. Both threshold switching and rectifying behavior were achieved based on sensitive control o...

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Detalles Bibliográficos
Autores principales: Seo, Jongseon, Han, Geonhui, Kim, Hyejin, Lee, Daeseok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696421/
https://www.ncbi.nlm.nih.gov/pubmed/36363895
http://dx.doi.org/10.3390/mi13111874
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author Seo, Jongseon
Han, Geonhui
Kim, Hyejin
Lee, Daeseok
author_facet Seo, Jongseon
Han, Geonhui
Kim, Hyejin
Lee, Daeseok
author_sort Seo, Jongseon
collection PubMed
description A metal–insulator–metal-structured Ag-filament-based transparent threshold switch is developed as a selector device for a crossbar array, which can lead to high-density integration of advanced memory devices. Both threshold switching and rectifying behavior were achieved based on sensitive control of the filament size. Conduction mechanism analyses demonstrated that the rectifying behavior resulted from the Schottky barrier at the interface. From the threshold switching, including the rectifying behavior, the available crossbar array size is 10 [Formula: see text]-times larger.
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spelling pubmed-96964212022-11-26 Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior Seo, Jongseon Han, Geonhui Kim, Hyejin Lee, Daeseok Micromachines (Basel) Article A metal–insulator–metal-structured Ag-filament-based transparent threshold switch is developed as a selector device for a crossbar array, which can lead to high-density integration of advanced memory devices. Both threshold switching and rectifying behavior were achieved based on sensitive control of the filament size. Conduction mechanism analyses demonstrated that the rectifying behavior resulted from the Schottky barrier at the interface. From the threshold switching, including the rectifying behavior, the available crossbar array size is 10 [Formula: see text]-times larger. MDPI 2022-10-31 /pmc/articles/PMC9696421/ /pubmed/36363895 http://dx.doi.org/10.3390/mi13111874 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Seo, Jongseon
Han, Geonhui
Kim, Hyejin
Lee, Daeseok
Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior
title Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior
title_full Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior
title_fullStr Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior
title_full_unstemmed Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior
title_short Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior
title_sort ag-ion-based transparent threshold switching selector with filament-size-dependent rectifying behavior
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696421/
https://www.ncbi.nlm.nih.gov/pubmed/36363895
http://dx.doi.org/10.3390/mi13111874
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AT kimhyejin agionbasedtransparentthresholdswitchingselectorwithfilamentsizedependentrectifyingbehavior
AT leedaeseok agionbasedtransparentthresholdswitchingselectorwithfilamentsizedependentrectifyingbehavior

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