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Combined Effect of TID Radiation and Electrical Stress on NMOSFETs
The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradati...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696535/ https://www.ncbi.nlm.nih.gov/pubmed/36363882 http://dx.doi.org/10.3390/mi13111860 |
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author | Cao, Yanrong Wang, Min Zheng, Xuefeng Zhang, Enxia Lv, Ling Wang, Liang Ma, Maodan Lv, Hanghang Wang, Zhiheng Wang, Yongkun Tian, Wenchao Ma, Xiaohua Hao, Yue |
author_facet | Cao, Yanrong Wang, Min Zheng, Xuefeng Zhang, Enxia Lv, Ling Wang, Liang Ma, Maodan Lv, Hanghang Wang, Zhiheng Wang, Yongkun Tian, Wenchao Ma, Xiaohua Hao, Yue |
author_sort | Cao, Yanrong |
collection | PubMed |
description | The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradation of the devices. The H bond is broken during the radiation process, which reduces the participation of H atoms in the later stage of electrical stress, thereby reducing the degradation caused by electrical stress. The positive charges of the oxide layer generated by radiation neutralize part of the tunneling electrons caused by electrical stress, and consume some of the electrons that react with the H bond, resulting in weaker degradation. In addition, the positive charges in shallow trench isolation (STI) generated by radiation create parasitic leakage paths at the interfaces of STI/Si, which increase the leakage current and reduce the positive shift of the threshold voltage. The parasitic effect generated by the positive charges of STI makes the threshold voltage of the narrow-channel device degrade more, and due to the gate edge effect, the threshold voltage of short-channel devices degrades more. |
format | Online Article Text |
id | pubmed-9696535 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96965352022-11-26 Combined Effect of TID Radiation and Electrical Stress on NMOSFETs Cao, Yanrong Wang, Min Zheng, Xuefeng Zhang, Enxia Lv, Ling Wang, Liang Ma, Maodan Lv, Hanghang Wang, Zhiheng Wang, Yongkun Tian, Wenchao Ma, Xiaohua Hao, Yue Micromachines (Basel) Article The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradation of the devices. The H bond is broken during the radiation process, which reduces the participation of H atoms in the later stage of electrical stress, thereby reducing the degradation caused by electrical stress. The positive charges of the oxide layer generated by radiation neutralize part of the tunneling electrons caused by electrical stress, and consume some of the electrons that react with the H bond, resulting in weaker degradation. In addition, the positive charges in shallow trench isolation (STI) generated by radiation create parasitic leakage paths at the interfaces of STI/Si, which increase the leakage current and reduce the positive shift of the threshold voltage. The parasitic effect generated by the positive charges of STI makes the threshold voltage of the narrow-channel device degrade more, and due to the gate edge effect, the threshold voltage of short-channel devices degrades more. MDPI 2022-10-29 /pmc/articles/PMC9696535/ /pubmed/36363882 http://dx.doi.org/10.3390/mi13111860 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Cao, Yanrong Wang, Min Zheng, Xuefeng Zhang, Enxia Lv, Ling Wang, Liang Ma, Maodan Lv, Hanghang Wang, Zhiheng Wang, Yongkun Tian, Wenchao Ma, Xiaohua Hao, Yue Combined Effect of TID Radiation and Electrical Stress on NMOSFETs |
title | Combined Effect of TID Radiation and Electrical Stress on NMOSFETs |
title_full | Combined Effect of TID Radiation and Electrical Stress on NMOSFETs |
title_fullStr | Combined Effect of TID Radiation and Electrical Stress on NMOSFETs |
title_full_unstemmed | Combined Effect of TID Radiation and Electrical Stress on NMOSFETs |
title_short | Combined Effect of TID Radiation and Electrical Stress on NMOSFETs |
title_sort | combined effect of tid radiation and electrical stress on nmosfets |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696535/ https://www.ncbi.nlm.nih.gov/pubmed/36363882 http://dx.doi.org/10.3390/mi13111860 |
work_keys_str_mv | AT caoyanrong combinedeffectoftidradiationandelectricalstressonnmosfets AT wangmin combinedeffectoftidradiationandelectricalstressonnmosfets AT zhengxuefeng combinedeffectoftidradiationandelectricalstressonnmosfets AT zhangenxia combinedeffectoftidradiationandelectricalstressonnmosfets AT lvling combinedeffectoftidradiationandelectricalstressonnmosfets AT wangliang combinedeffectoftidradiationandelectricalstressonnmosfets AT mamaodan combinedeffectoftidradiationandelectricalstressonnmosfets AT lvhanghang combinedeffectoftidradiationandelectricalstressonnmosfets AT wangzhiheng combinedeffectoftidradiationandelectricalstressonnmosfets AT wangyongkun combinedeffectoftidradiationandelectricalstressonnmosfets AT tianwenchao combinedeffectoftidradiationandelectricalstressonnmosfets AT maxiaohua combinedeffectoftidradiationandelectricalstressonnmosfets AT haoyue combinedeffectoftidradiationandelectricalstressonnmosfets |