Combined Effect of TID Radiation and Electrical Stress on NMOSFETs

The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradati...

Descripción completa

Detalles Bibliográficos
Autores principales: Cao, Yanrong, Wang, Min, Zheng, Xuefeng, Zhang, Enxia, Lv, Ling, Wang, Liang, Ma, Maodan, Lv, Hanghang, Wang, Zhiheng, Wang, Yongkun, Tian, Wenchao, Ma, Xiaohua, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696535/
https://www.ncbi.nlm.nih.gov/pubmed/36363882
http://dx.doi.org/10.3390/mi13111860

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696535/
https://www.ncbi.nlm.nih.gov/pubmed/36363882
http://dx.doi.org/10.3390/mi13111860

Ejemplares similares