Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier

Electron leakage has an adverse influence on the optical output power for laser diodes (LDs), especially where the conventional last quantum barrier (LQB) in the multiple quantum well (MQW) active region may cause severe leakage problems. In this article, a composite last quantum barrier (CLQB) comp...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Zhenzhuo, Yang, Jing, Zhao, Degang, Liang, Feng, Chen, Ping, Liu, Zongshun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697115/
https://www.ncbi.nlm.nih.gov/pubmed/36432275
http://dx.doi.org/10.3390/nano12223990

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697115/
https://www.ncbi.nlm.nih.gov/pubmed/36432275
http://dx.doi.org/10.3390/nano12223990

Ejemplares similares