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Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier
Electron leakage has an adverse influence on the optical output power for laser diodes (LDs), especially where the conventional last quantum barrier (LQB) in the multiple quantum well (MQW) active region may cause severe leakage problems. In this article, a composite last quantum barrier (CLQB) comp...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697115/ https://www.ncbi.nlm.nih.gov/pubmed/36432275 http://dx.doi.org/10.3390/nano12223990 |