Threshold Switching in Forming-Free Anodic Memristors Grown on Hf–Nb Combinatorial Thin-Film Alloys

The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf–Nb thin-film combinatorial system deposited by sputtering o...

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Detalles Bibliográficos
Autores principales: Zrinski, Ivana, Zavašnik, Janez, Duchoslav, Jiri, Hassel, Achim Walter, Mardare, Andrei Ionut
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697845/
https://www.ncbi.nlm.nih.gov/pubmed/36432230
http://dx.doi.org/10.3390/nano12223944

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697845/
https://www.ncbi.nlm.nih.gov/pubmed/36432230
http://dx.doi.org/10.3390/nano12223944

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