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Threshold Switching in Forming-Free Anodic Memristors Grown on Hf–Nb Combinatorial Thin-Film Alloys
The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf–Nb thin-film combinatorial system deposited by sputtering o...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697845/ https://www.ncbi.nlm.nih.gov/pubmed/36432230 http://dx.doi.org/10.3390/nano12223944 |