Multi-Band Power Amplifier Module with Back-Off Efficiency Improvement using Ultra-Compact 3D Vertical Stack Multi-Chip Package for Cellular Handsets

A highly integrated multi-mode multi-band (MMMB) power amplifier module (PAM) using hybrid bulk complementary metal oxide semiconductor (CMOS), gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), and silicon-on-insulator (SOI) technologies for low band (LB, 824–915 MHz) and high band (H...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Zhihao, Li, Jing, Peng, Lin, Sun, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698143/
https://www.ncbi.nlm.nih.gov/pubmed/36422405
http://dx.doi.org/10.3390/mi13111976

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698143/
https://www.ncbi.nlm.nih.gov/pubmed/36422405
http://dx.doi.org/10.3390/mi13111976

Ejemplares similares