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First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor
Pentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pentagonal SiPN, p-SiPN, which is geometrically, the...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698478/ https://www.ncbi.nlm.nih.gov/pubmed/36432354 http://dx.doi.org/10.3390/nano12224068 |
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author | Bhandari Sharma, Shambhu Qattan, Issam KC, Santosh Abedrabbo, Sufian |
author_facet | Bhandari Sharma, Shambhu Qattan, Issam KC, Santosh Abedrabbo, Sufian |
author_sort | Bhandari Sharma, Shambhu |
collection | PubMed |
description | Pentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pentagonal SiPN, p-SiPN, which is geometrically, thermodynamically, dynamically, and mechanically stable, and has promising experimental potential. The new p-SiPN shows an indirect bandgap semiconducting behavior that is highly tunable with applied equ-biaxial strain. It is mechanically isotropic, along the x-y in-plane direction, and is a soft material possessing high elasticity and ultimate strain. In addition, its exceptional anisotropic optical response with strong UV light absorbance, and small reflectivity and electron energy loss make it a potential material for optoelectronics and nanomechanics. |
format | Online Article Text |
id | pubmed-9698478 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96984782022-11-26 First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor Bhandari Sharma, Shambhu Qattan, Issam KC, Santosh Abedrabbo, Sufian Nanomaterials (Basel) Article Pentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pentagonal SiPN, p-SiPN, which is geometrically, thermodynamically, dynamically, and mechanically stable, and has promising experimental potential. The new p-SiPN shows an indirect bandgap semiconducting behavior that is highly tunable with applied equ-biaxial strain. It is mechanically isotropic, along the x-y in-plane direction, and is a soft material possessing high elasticity and ultimate strain. In addition, its exceptional anisotropic optical response with strong UV light absorbance, and small reflectivity and electron energy loss make it a potential material for optoelectronics and nanomechanics. MDPI 2022-11-18 /pmc/articles/PMC9698478/ /pubmed/36432354 http://dx.doi.org/10.3390/nano12224068 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Bhandari Sharma, Shambhu Qattan, Issam KC, Santosh Abedrabbo, Sufian First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor |
title | First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor |
title_full | First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor |
title_fullStr | First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor |
title_full_unstemmed | First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor |
title_short | First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor |
title_sort | first-principles prediction of new 2d p-sipn: a wide bandgap semiconductor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698478/ https://www.ncbi.nlm.nih.gov/pubmed/36432354 http://dx.doi.org/10.3390/nano12224068 |
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