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Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging

High-performance composites with a resin matrix are urgently required for electronic packaging due to their low dielectric constant, outstanding high temperature resistance, excellent corrosion resistance, light weight and easy molding. In this work, hollow-glass-microsphere (HGM)-filled fluorinated...

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Autores principales: Wu, Minjie, Han, Wenshuang, Zhang, Chun, Zhang, Shuo, Zhang, Xinyang, Chen, Xinggang, Naito, Kimiyoshi, Yu, Xiaoyan, Zhang, Qingxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698618/
https://www.ncbi.nlm.nih.gov/pubmed/36432259
http://dx.doi.org/10.3390/nano12223973
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author Wu, Minjie
Han, Wenshuang
Zhang, Chun
Zhang, Shuo
Zhang, Xinyang
Chen, Xinggang
Naito, Kimiyoshi
Yu, Xiaoyan
Zhang, Qingxin
author_facet Wu, Minjie
Han, Wenshuang
Zhang, Chun
Zhang, Shuo
Zhang, Xinyang
Chen, Xinggang
Naito, Kimiyoshi
Yu, Xiaoyan
Zhang, Qingxin
author_sort Wu, Minjie
collection PubMed
description High-performance composites with a resin matrix are urgently required for electronic packaging due to their low dielectric constant, outstanding high temperature resistance, excellent corrosion resistance, light weight and easy molding. In this work, hollow-glass-microsphere (HGM)-filled fluorinated-phthalonitrile (PBDP) composites, with filler contents ranging from 0 to 35.0 vol.%, were prepared in order to modify the dielectric properties of the phthalonitrile. Scanning electron microscopy (SEM) observations indicate that the modified HGM particles were uniformly dispersed in the matrix. The PBDP/27.5HGM-NH(2) composite demonstrates a low dielectric constant of 1.85 at 12 GHz. The 5% thermogravimetric temperature (T(5)) of composites with silanized HGM filler (481–486 °C) is higher than the minimum packaging-material requirements (450 °C). In addition, the heat-resistance index (T(HRI)) of PBDP/HGM-NH(2) composites reached as high as 268 °C. the storage modulus of PBDP/HGM-NH(2) composites were significantly increased to 1283 MPa at 400 °C, an increase by 50%, in comparison to that of PBDP phthalonitrile resin (857 MPa). The excellent dielectric and thermal properties of the present composites may pave a way for comprehensive applications in electronic packaging and thermal management for energy systems.
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spelling pubmed-96986182022-11-26 Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging Wu, Minjie Han, Wenshuang Zhang, Chun Zhang, Shuo Zhang, Xinyang Chen, Xinggang Naito, Kimiyoshi Yu, Xiaoyan Zhang, Qingxin Nanomaterials (Basel) Article High-performance composites with a resin matrix are urgently required for electronic packaging due to their low dielectric constant, outstanding high temperature resistance, excellent corrosion resistance, light weight and easy molding. In this work, hollow-glass-microsphere (HGM)-filled fluorinated-phthalonitrile (PBDP) composites, with filler contents ranging from 0 to 35.0 vol.%, were prepared in order to modify the dielectric properties of the phthalonitrile. Scanning electron microscopy (SEM) observations indicate that the modified HGM particles were uniformly dispersed in the matrix. The PBDP/27.5HGM-NH(2) composite demonstrates a low dielectric constant of 1.85 at 12 GHz. The 5% thermogravimetric temperature (T(5)) of composites with silanized HGM filler (481–486 °C) is higher than the minimum packaging-material requirements (450 °C). In addition, the heat-resistance index (T(HRI)) of PBDP/HGM-NH(2) composites reached as high as 268 °C. the storage modulus of PBDP/HGM-NH(2) composites were significantly increased to 1283 MPa at 400 °C, an increase by 50%, in comparison to that of PBDP phthalonitrile resin (857 MPa). The excellent dielectric and thermal properties of the present composites may pave a way for comprehensive applications in electronic packaging and thermal management for energy systems. MDPI 2022-11-11 /pmc/articles/PMC9698618/ /pubmed/36432259 http://dx.doi.org/10.3390/nano12223973 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wu, Minjie
Han, Wenshuang
Zhang, Chun
Zhang, Shuo
Zhang, Xinyang
Chen, Xinggang
Naito, Kimiyoshi
Yu, Xiaoyan
Zhang, Qingxin
Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging
title Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging
title_full Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging
title_fullStr Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging
title_full_unstemmed Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging
title_short Rational Design of Fluorinated Phthalonitrile/Hollow Glass Microsphere Composite with Low Dielectric Constant and Excellent Heat Resistance for Microelectronic Packaging
title_sort rational design of fluorinated phthalonitrile/hollow glass microsphere composite with low dielectric constant and excellent heat resistance for microelectronic packaging
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698618/
https://www.ncbi.nlm.nih.gov/pubmed/36432259
http://dx.doi.org/10.3390/nano12223973
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