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Realising high aspect ratio 10 nm feature size in laser materials processing in air at 800 nm wavelength in the far-field by creating a high purity longitudinal light field at focus

In semiconductor and data storage device manufacturing, it is desirable to produce feature sizes less than 30 nm with a high depth-to-width aspect ratio on the target material rapidly at a low cost. However, optical diffraction limits the smallest focused laser beam diameter to around half of the la...

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Detalles Bibliográficos
Autores principales: Li, Zhaoqing, Allegre, Olivier, Li, Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9715648/
https://www.ncbi.nlm.nih.gov/pubmed/36456549
http://dx.doi.org/10.1038/s41377-022-00962-x

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