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Realising high aspect ratio 10 nm feature size in laser materials processing in air at 800 nm wavelength in the far-field by creating a high purity longitudinal light field at focus
In semiconductor and data storage device manufacturing, it is desirable to produce feature sizes less than 30 nm with a high depth-to-width aspect ratio on the target material rapidly at a low cost. However, optical diffraction limits the smallest focused laser beam diameter to around half of the la...
Autores principales: | Li, Zhaoqing, Allegre, Olivier, Li, Lin |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9715648/ https://www.ncbi.nlm.nih.gov/pubmed/36456549 http://dx.doi.org/10.1038/s41377-022-00962-x |
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