Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing

Detalles Bibliográficos
Autores principales: Park, Seongae, Spetzler, Benjamin, Ivanov, Tzvetan, Ziegler, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Author Correction
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9723096/
https://www.ncbi.nlm.nih.gov/pubmed/36470942
http://dx.doi.org/10.1038/s41598-022-25502-w
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author Park, Seongae
Spetzler, Benjamin
Ivanov, Tzvetan
Ziegler, Martin
author_facet Park, Seongae
Spetzler, Benjamin
Ivanov, Tzvetan
Ziegler, Martin
author_sort Park, Seongae
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spelling pubmed-97230962022-12-07 Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing Park, Seongae Spetzler, Benjamin Ivanov, Tzvetan Ziegler, Martin Sci Rep Author Correction Nature Publishing Group UK 2022-12-05 /pmc/articles/PMC9723096/ /pubmed/36470942 http://dx.doi.org/10.1038/s41598-022-25502-w Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Author Correction
Park, Seongae
Spetzler, Benjamin
Ivanov, Tzvetan
Ziegler, Martin
Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing
title Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing
title_full Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing
title_fullStr Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing
title_full_unstemmed Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing
title_short Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing
title_sort author correction: multilayer redox-based hfo(x)/al(2)o(3)/tio(2) memristive structures for neuromorphic computing
topic Author Correction
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9723096/
https://www.ncbi.nlm.nih.gov/pubmed/36470942
http://dx.doi.org/10.1038/s41598-022-25502-w
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AT ivanovtzvetan authorcorrectionmultilayerredoxbasedhfoxal2o3tio2memristivestructuresforneuromorphiccomputing
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