Author Correction: Multilayer redox-based HfO(x)/Al(2)O(3)/TiO(2) memristive structures for neuromorphic computing

Detalles Bibliográficos
Autores principales: Park, Seongae, Spetzler, Benjamin, Ivanov, Tzvetan, Ziegler, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Author Correction
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9723096/
https://www.ncbi.nlm.nih.gov/pubmed/36470942
http://dx.doi.org/10.1038/s41598-022-25502-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9723096/
https://www.ncbi.nlm.nih.gov/pubmed/36470942
http://dx.doi.org/10.1038/s41598-022-25502-w

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