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Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths
A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high responsivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than 10(3 )A/W, which is insufficient for...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9734153/ https://www.ncbi.nlm.nih.gov/pubmed/36494365 http://dx.doi.org/10.1038/s41467-022-35206-4 |
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author | Ochiai, Takaya Akazawa, Tomohiro Miyatake, Yuto Sumita, Kei Ohno, Shuhei Monfray, Stéphane Boeuf, Frederic Toprasertpong, Kasidit Takagi, Shinichi Takenaka, Mitsuru |
author_facet | Ochiai, Takaya Akazawa, Tomohiro Miyatake, Yuto Sumita, Kei Ohno, Shuhei Monfray, Stéphane Boeuf, Frederic Toprasertpong, Kasidit Takagi, Shinichi Takenaka, Mitsuru |
author_sort | Ochiai, Takaya |
collection | PubMed |
description | A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high responsivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than 10(3 )A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor operating at a 1.3 μm wavelength, which consists of an InGaAs ultrathin channel on a Si waveguide working as a gate electrode to increase the responsivity. The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. As a result, our phototransistor achieved the highest responsivity of approximately 10(6) A/W among the waveguide-coupled phototransistors, allowing us to detect light of 621 fW propagating in the Si waveguide. The high responsivity and the reasonable response time of approximately 100 μs make our phototransistor promising as an effective optical power monitor in Si photonic circuits. |
format | Online Article Text |
id | pubmed-9734153 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-97341532022-12-11 Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths Ochiai, Takaya Akazawa, Tomohiro Miyatake, Yuto Sumita, Kei Ohno, Shuhei Monfray, Stéphane Boeuf, Frederic Toprasertpong, Kasidit Takagi, Shinichi Takenaka, Mitsuru Nat Commun Article A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high responsivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than 10(3 )A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor operating at a 1.3 μm wavelength, which consists of an InGaAs ultrathin channel on a Si waveguide working as a gate electrode to increase the responsivity. The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. As a result, our phototransistor achieved the highest responsivity of approximately 10(6) A/W among the waveguide-coupled phototransistors, allowing us to detect light of 621 fW propagating in the Si waveguide. The high responsivity and the reasonable response time of approximately 100 μs make our phototransistor promising as an effective optical power monitor in Si photonic circuits. Nature Publishing Group UK 2022-12-09 /pmc/articles/PMC9734153/ /pubmed/36494365 http://dx.doi.org/10.1038/s41467-022-35206-4 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Ochiai, Takaya Akazawa, Tomohiro Miyatake, Yuto Sumita, Kei Ohno, Shuhei Monfray, Stéphane Boeuf, Frederic Toprasertpong, Kasidit Takagi, Shinichi Takenaka, Mitsuru Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths |
title | Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths |
title_full | Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths |
title_fullStr | Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths |
title_full_unstemmed | Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths |
title_short | Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths |
title_sort | ultrahigh-responsivity waveguide-coupled optical power monitor for si photonic circuits operating at near-infrared wavelengths |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9734153/ https://www.ncbi.nlm.nih.gov/pubmed/36494365 http://dx.doi.org/10.1038/s41467-022-35206-4 |
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