Floquet engineering of tilted and gapped Dirac bandstructure in 1T[Formula: see text] -MoS[Formula: see text]

We have developed a rigorous theoretical formalism for Floquet engineering, investigating, and subsequently tailoring most crucial electronic properties of 1T[Formula: see text] -MoS[Formula: see text] by applying an external high-frequency dressing field within the off-resonance regime. It was rece...

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Detalles Bibliográficos
Autores principales: Iurov, Andrii, Zhemchuzhna, Liubov, Gumbs, Godfrey, Huang, Danhong, Tse, Wang-Kong, Blaise, Kathy, Ejiogu, Chinedu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9734163/
https://www.ncbi.nlm.nih.gov/pubmed/36494457
http://dx.doi.org/10.1038/s41598-022-25898-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9734163/
https://www.ncbi.nlm.nih.gov/pubmed/36494457
http://dx.doi.org/10.1038/s41598-022-25898-5

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