Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO(2) ALD Properties for Improved Electrical and Reliability Parameters

Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated chips. Towards achieving better electrical performance, there is a need for investigation into the influence of...

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Detalles Bibliográficos
Autores principales: Falidas, Konstantinos Efstathios, Kühnel, Kati, Rudolph, Matthias, Everding, Maximilian B., Czernohorsky, Malte, Heitmann, Johannes
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738140/
https://www.ncbi.nlm.nih.gov/pubmed/36499822
http://dx.doi.org/10.3390/ma15238325

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738140/
https://www.ncbi.nlm.nih.gov/pubmed/36499822
http://dx.doi.org/10.3390/ma15238325

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