Large-Scale MoS(2) Pixel Array for Imaging Sensor

Two-dimensional molybdenum disulfide (MoS(2)) has been extensively investigated in the field of optoelectronic devices. However, most reported MoS(2) phototransistors are fabricated using the mechanical exfoliation method to obtain micro-scale MoS(2) flakes, which is laboratory- feasible but not practical for the future industrial fabrication of large-scale pixel arrays. Recently, wafer-scale MoS(2) growth has been rapidly developed, but few results of uniform large-scale photoelectric devices were reported. Here, we designed a 12 × 12 pixels pixel array image sensor fabricated on a 2 cm × 2 cm monolayer MoS(2) film grown by chemical vapor deposition (CVD). The photogating effect induced by the formation of trap states ensures a high photoresponsivity of 364 AW(−1), which is considerably superior to traditional CMOS sensors (≈0.1 AW(−1)). Experimental results also show highly uniform photoelectric properties in this array. Finally, the concatenated image obtained by laser lighting stencil and photolithography mask demonstrates the promising potential of 2D MoS(2) for future optoelectrical applications.