Charge Transport inside TiO(2) Memristors Prepared via FEBID

We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO(2)/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior wa...

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Detalles Bibliográficos
Autores principales: Baranowski, Markus, Sachser, Roland, Marinković, Bratislav P., Ivanović, Stefan Dj., Huth, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740258/
https://www.ncbi.nlm.nih.gov/pubmed/36500769
http://dx.doi.org/10.3390/nano12234145
Descripción
Sumario:We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO(2)/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping. From this observation, a valence change mechanism of the charge transport inside the TiO(2) layer can be deduced.

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