Charge Transport inside TiO(2) Memristors Prepared via FEBID

We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO(2)/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior wa...

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Detalles Bibliográficos
Autores principales: Baranowski, Markus, Sachser, Roland, Marinković, Bratislav P., Ivanović, Stefan Dj., Huth, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740258/
https://www.ncbi.nlm.nih.gov/pubmed/36500769
http://dx.doi.org/10.3390/nano12234145
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author Baranowski, Markus
Sachser, Roland
Marinković, Bratislav P.
Ivanović, Stefan Dj.
Huth, Michael
author_facet Baranowski, Markus
Sachser, Roland
Marinković, Bratislav P.
Ivanović, Stefan Dj.
Huth, Michael
author_sort Baranowski, Markus
collection PubMed
description We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO(2)/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping. From this observation, a valence change mechanism of the charge transport inside the TiO(2) layer can be deduced.
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spelling pubmed-97402582022-12-11 Charge Transport inside TiO(2) Memristors Prepared via FEBID Baranowski, Markus Sachser, Roland Marinković, Bratislav P. Ivanović, Stefan Dj. Huth, Michael Nanomaterials (Basel) Article We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO(2)/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping. From this observation, a valence change mechanism of the charge transport inside the TiO(2) layer can be deduced. MDPI 2022-11-23 /pmc/articles/PMC9740258/ /pubmed/36500769 http://dx.doi.org/10.3390/nano12234145 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Baranowski, Markus
Sachser, Roland
Marinković, Bratislav P.
Ivanović, Stefan Dj.
Huth, Michael
Charge Transport inside TiO(2) Memristors Prepared via FEBID
title Charge Transport inside TiO(2) Memristors Prepared via FEBID
title_full Charge Transport inside TiO(2) Memristors Prepared via FEBID
title_fullStr Charge Transport inside TiO(2) Memristors Prepared via FEBID
title_full_unstemmed Charge Transport inside TiO(2) Memristors Prepared via FEBID
title_short Charge Transport inside TiO(2) Memristors Prepared via FEBID
title_sort charge transport inside tio(2) memristors prepared via febid
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740258/
https://www.ncbi.nlm.nih.gov/pubmed/36500769
http://dx.doi.org/10.3390/nano12234145
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AT ivanovicstefandj chargetransportinsidetio2memristorspreparedviafebid
AT huthmichael chargetransportinsidetio2memristorspreparedviafebid

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