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Charge Transport inside TiO(2) Memristors Prepared via FEBID

We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO(2)/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior wa...

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Detalles Bibliográficos
Autores principales:	Baranowski, Markus, Sachser, Roland, Marinković, Bratislav P., Ivanović, Stefan Dj., Huth, Michael
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740258/ https://www.ncbi.nlm.nih.gov/pubmed/36500769 http://dx.doi.org/10.3390/nano12234145

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