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Polarization Switching Kinetics in Thin Ferroelectric HZO Films
Ferroelectric polycrystalline HfO(2) thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability, low power consumption and high endurance....
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740545/ https://www.ncbi.nlm.nih.gov/pubmed/36500749 http://dx.doi.org/10.3390/nano12234126 |
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author | Kondratyuk, Ekaterina Chouprik, Anastasia |
author_facet | Kondratyuk, Ekaterina Chouprik, Anastasia |
author_sort | Kondratyuk, Ekaterina |
collection | PubMed |
description | Ferroelectric polycrystalline HfO(2) thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability, low power consumption and high endurance. However, for the commercialization of ferroelectric memory, some crucial aspects of its operation should be addressed, including the polarization switching mechanism that determines the switching speed. Although several reports on polarization switching kinetics in HfO(2)-based layers already exist, the physical origin of retardation behavior of polarization switching at the low and medium switching fields remains unclear. In this work, we examine several models of switching kinetics that can potentially explain or describe retardation behavior observed in experimental switching kinetics for Hf(0.5)Zr(0.5)O(2) (HZO)-based capacitors and propose a new model. The proposed model is based on a statistical model of switching kinetics, which has been significantly extended to take into account the specific properties of HZO. The model includes contributions of the depolarization field and the built-in internal field originating from the charge injection into the functional HZO layer during the read procedure as well as in-plane inhomogeneity of the total electric field in ferroelectric. The general model of switching kinetics shows excellent agreement with the experimental results. |
format | Online Article Text |
id | pubmed-9740545 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-97405452022-12-11 Polarization Switching Kinetics in Thin Ferroelectric HZO Films Kondratyuk, Ekaterina Chouprik, Anastasia Nanomaterials (Basel) Article Ferroelectric polycrystalline HfO(2) thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability, low power consumption and high endurance. However, for the commercialization of ferroelectric memory, some crucial aspects of its operation should be addressed, including the polarization switching mechanism that determines the switching speed. Although several reports on polarization switching kinetics in HfO(2)-based layers already exist, the physical origin of retardation behavior of polarization switching at the low and medium switching fields remains unclear. In this work, we examine several models of switching kinetics that can potentially explain or describe retardation behavior observed in experimental switching kinetics for Hf(0.5)Zr(0.5)O(2) (HZO)-based capacitors and propose a new model. The proposed model is based on a statistical model of switching kinetics, which has been significantly extended to take into account the specific properties of HZO. The model includes contributions of the depolarization field and the built-in internal field originating from the charge injection into the functional HZO layer during the read procedure as well as in-plane inhomogeneity of the total electric field in ferroelectric. The general model of switching kinetics shows excellent agreement with the experimental results. MDPI 2022-11-22 /pmc/articles/PMC9740545/ /pubmed/36500749 http://dx.doi.org/10.3390/nano12234126 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kondratyuk, Ekaterina Chouprik, Anastasia Polarization Switching Kinetics in Thin Ferroelectric HZO Films |
title | Polarization Switching Kinetics in Thin Ferroelectric HZO Films |
title_full | Polarization Switching Kinetics in Thin Ferroelectric HZO Films |
title_fullStr | Polarization Switching Kinetics in Thin Ferroelectric HZO Films |
title_full_unstemmed | Polarization Switching Kinetics in Thin Ferroelectric HZO Films |
title_short | Polarization Switching Kinetics in Thin Ferroelectric HZO Films |
title_sort | polarization switching kinetics in thin ferroelectric hzo films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740545/ https://www.ncbi.nlm.nih.gov/pubmed/36500749 http://dx.doi.org/10.3390/nano12234126 |
work_keys_str_mv | AT kondratyukekaterina polarizationswitchingkineticsinthinferroelectrichzofilms AT chouprikanastasia polarizationswitchingkineticsinthinferroelectrichzofilms |