Cargando…
Polarization Switching Kinetics in Thin Ferroelectric HZO Films
Ferroelectric polycrystalline HfO(2) thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability, low power consumption and high endurance....
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740545/ https://www.ncbi.nlm.nih.gov/pubmed/36500749 http://dx.doi.org/10.3390/nano12234126 |