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Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping

Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation...

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Autores principales: Sokolova, Anastasiia V., Skurlov, Ivan D., Babaev, Anton A., Perfenov, Peter S., Miropoltsev, Maksim A., Danilov, Denis V., Baranov, Mikhail A., Kolesnikov, Ilya E., Koroleva, Aleksandra V., Zhizhin, Evgeniy V., Litvin, Aleksandr P., Fedorov, Anatoly V., Cherevkov, Sergei A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740587/
https://www.ncbi.nlm.nih.gov/pubmed/36500819
http://dx.doi.org/10.3390/nano12234198
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author Sokolova, Anastasiia V.
Skurlov, Ivan D.
Babaev, Anton A.
Perfenov, Peter S.
Miropoltsev, Maksim A.
Danilov, Denis V.
Baranov, Mikhail A.
Kolesnikov, Ilya E.
Koroleva, Aleksandra V.
Zhizhin, Evgeniy V.
Litvin, Aleksandr P.
Fedorov, Anatoly V.
Cherevkov, Sergei A.
author_facet Sokolova, Anastasiia V.
Skurlov, Ivan D.
Babaev, Anton A.
Perfenov, Peter S.
Miropoltsev, Maksim A.
Danilov, Denis V.
Baranov, Mikhail A.
Kolesnikov, Ilya E.
Koroleva, Aleksandra V.
Zhizhin, Evgeniy V.
Litvin, Aleksandr P.
Fedorov, Anatoly V.
Cherevkov, Sergei A.
author_sort Sokolova, Anastasiia V.
collection PubMed
description Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation exchange reaction on the HgTe nanoplatelets, substituting Hg cations with Pb cations. Under the optimized reaction conditions and Pb precursor ratio, a photoluminescence band shifts to ~1100 nm with a quantum yield of 22%. Based on steady-state and transient optical spectroscopies, we suggest a model of photoexcitation relaxation in the HgTe:Pb nanoplatelets. We also demonstrate that the thin films of doped nanoplatelets possess superior electric properties compared to their pristine counterparts. These findings show that Pb-doped HgTe nanoplatelets are new perspective material for application in both light-emitting and light-detection devices operating in the near-infrared spectral region.
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spelling pubmed-97405872022-12-11 Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping Sokolova, Anastasiia V. Skurlov, Ivan D. Babaev, Anton A. Perfenov, Peter S. Miropoltsev, Maksim A. Danilov, Denis V. Baranov, Mikhail A. Kolesnikov, Ilya E. Koroleva, Aleksandra V. Zhizhin, Evgeniy V. Litvin, Aleksandr P. Fedorov, Anatoly V. Cherevkov, Sergei A. Nanomaterials (Basel) Article Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation exchange reaction on the HgTe nanoplatelets, substituting Hg cations with Pb cations. Under the optimized reaction conditions and Pb precursor ratio, a photoluminescence band shifts to ~1100 nm with a quantum yield of 22%. Based on steady-state and transient optical spectroscopies, we suggest a model of photoexcitation relaxation in the HgTe:Pb nanoplatelets. We also demonstrate that the thin films of doped nanoplatelets possess superior electric properties compared to their pristine counterparts. These findings show that Pb-doped HgTe nanoplatelets are new perspective material for application in both light-emitting and light-detection devices operating in the near-infrared spectral region. MDPI 2022-11-25 /pmc/articles/PMC9740587/ /pubmed/36500819 http://dx.doi.org/10.3390/nano12234198 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sokolova, Anastasiia V.
Skurlov, Ivan D.
Babaev, Anton A.
Perfenov, Peter S.
Miropoltsev, Maksim A.
Danilov, Denis V.
Baranov, Mikhail A.
Kolesnikov, Ilya E.
Koroleva, Aleksandra V.
Zhizhin, Evgeniy V.
Litvin, Aleksandr P.
Fedorov, Anatoly V.
Cherevkov, Sergei A.
Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping
title Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping
title_full Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping
title_fullStr Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping
title_full_unstemmed Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping
title_short Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping
title_sort near-infrared emission of hgte nanoplatelets tuned by pb-doping
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9740587/
https://www.ncbi.nlm.nih.gov/pubmed/36500819
http://dx.doi.org/10.3390/nano12234198
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