Operating region-dependent characteristics of weight updates in synaptic In–Ga–Zn–O thin-film transistors

We present a study on characteristics of operating region-dependent weight updates in a synaptic thin-film transistor (Syn-TFT) with an amorphous In–Ga–Zn–O (IGZO) channel layer. For a synaptic behavior (e.g. a memory phenomenon) of the IGZO TFT, a defective oxide (e.g. SiO(2)) is intentionally used for a charge trapping due to programming pulses to the gate terminal. Based on this synaptic behavior, a conductance of the Syn-TFT is modulated depending on the programming pulses, thus weight updates. This weight update characteristics of the Syn-TFT is analyzed in terms of a dynamic ratio (dr(w)) for two operating regions (i.e. the above-threshold and sub-threshold regimes). Here, the operating region is chosen depending on the level of the gate read-voltage relative to the threshold voltage of the Syn-TFT. To verify these, the static and pulsed characteristics of the fabricated Syn-TFT are monitored experimentally. As experimental results, it is found that the dr(w) of the sub-threshold regime is larger compared to the above-threshold regime. In addition, the weight linearity in the sub-threshold regime is observed to be better compared to the above-threshold regime. Since it is expected that either the dr(w) or weight linearity can affect performances (e.g. a classification accuracy) of an analog accelerator (AA) constructed with the Syn-TFTs, the AA simulation is performed to check this with a crossbar simulator.