Operating region-dependent characteristics of weight updates in synaptic In–Ga–Zn–O thin-film transistors

We present a study on characteristics of operating region-dependent weight updates in a synaptic thin-film transistor (Syn-TFT) with an amorphous In–Ga–Zn–O (IGZO) channel layer. For a synaptic behavior (e.g. a memory phenomenon) of the IGZO TFT, a defective oxide (e.g. SiO(2)) is intentionally used...

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Detalles Bibliográficos
Autores principales: Cha, Danyoung, Kang, Yeonsu, Lee, Sungsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9744913/
https://www.ncbi.nlm.nih.gov/pubmed/36509807
http://dx.doi.org/10.1038/s41598-022-26123-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9744913/
https://www.ncbi.nlm.nih.gov/pubmed/36509807
http://dx.doi.org/10.1038/s41598-022-26123-z

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