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New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111)
[Image: see text] Metal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoel...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9753200/ https://www.ncbi.nlm.nih.gov/pubmed/36530266 http://dx.doi.org/10.1021/acsomega.2c05606 |
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author | Shao, Enze Liu, Kai Xie, Hao Geng, Kaiqi Bai, Keke Qiu, Jinglan Wang, Jing Wang, Wen-Xiao Song, Juntao |
author_facet | Shao, Enze Liu, Kai Xie, Hao Geng, Kaiqi Bai, Keke Qiu, Jinglan Wang, Jing Wang, Wen-Xiao Song, Juntao |
author_sort | Shao, Enze |
collection | PubMed |
description | [Image: see text] Metal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometry, and first-principle calculations. We reveal that the AlSe surface alloy possesses a closed-packed atomic structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with a height difference of 1.16 Å. Our results indicate that the AlSe alloy hosts two hole-like bands, which are mainly derived from the in-plane orbital of AlSe (p(x) and p(y)). These two bands located at about −2.22 ±0.01 eV around the Gamma point, far below the Fermi level, distinguished from other metal chalcogenides and binary alloys. AlSe alloys have the advantages of large-scale atomic flat terraces and a wide band gap, appropriate to serve as an interface layer for two-dimensional materials. Meanwhile, our results provide implications for related Al-chalcogen interfaces. |
format | Online Article Text |
id | pubmed-9753200 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-97532002022-12-16 New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111) Shao, Enze Liu, Kai Xie, Hao Geng, Kaiqi Bai, Keke Qiu, Jinglan Wang, Jing Wang, Wen-Xiao Song, Juntao ACS Omega [Image: see text] Metal chalcogenides are a promising material for novel physical research and nanoelectronic device applications. Here, we systematically investigate the crystal structure and electronic properties of AlSe alloys on Al(111) using scanning tunneling microscopy, angle-resolved photoelectron spectrometry, and first-principle calculations. We reveal that the AlSe surface alloy possesses a closed-packed atomic structure. The AlSe surface alloy comprises two atomic sublayers (Se sublayer and Al sublayer) with a height difference of 1.16 Å. Our results indicate that the AlSe alloy hosts two hole-like bands, which are mainly derived from the in-plane orbital of AlSe (p(x) and p(y)). These two bands located at about −2.22 ±0.01 eV around the Gamma point, far below the Fermi level, distinguished from other metal chalcogenides and binary alloys. AlSe alloys have the advantages of large-scale atomic flat terraces and a wide band gap, appropriate to serve as an interface layer for two-dimensional materials. Meanwhile, our results provide implications for related Al-chalcogen interfaces. American Chemical Society 2022-11-29 /pmc/articles/PMC9753200/ /pubmed/36530266 http://dx.doi.org/10.1021/acsomega.2c05606 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
spellingShingle | Shao, Enze Liu, Kai Xie, Hao Geng, Kaiqi Bai, Keke Qiu, Jinglan Wang, Jing Wang, Wen-Xiao Song, Juntao New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111) |
title | New Alloy of an Al-Chalcogen System: AlSe Surface
Alloys on Al(111) |
title_full | New Alloy of an Al-Chalcogen System: AlSe Surface
Alloys on Al(111) |
title_fullStr | New Alloy of an Al-Chalcogen System: AlSe Surface
Alloys on Al(111) |
title_full_unstemmed | New Alloy of an Al-Chalcogen System: AlSe Surface
Alloys on Al(111) |
title_short | New Alloy of an Al-Chalcogen System: AlSe Surface
Alloys on Al(111) |
title_sort | new alloy of an al-chalcogen system: alse surface
alloys on al(111) |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9753200/ https://www.ncbi.nlm.nih.gov/pubmed/36530266 http://dx.doi.org/10.1021/acsomega.2c05606 |
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