First-Principles Investigations of Thermoelectric Behavior of RuCrX (X = Si, Ge, Sn)

[Image: see text] The half-Heusler alloys have not only been recognized for spintronic and memory devices but also for thermoelectric applications. In this research work, the detailed study for thermoelectric parameters of RuCrX (X = Si, Ge, Sn) half-Heusler alloys has been carried out by using the...

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Detalles Bibliográficos
Autores principales: Asif, Muhammad, Alrashdi, Ayash O, Fadhali, Mohammed M., Afaq, A., Bakar, Abu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9753640/
https://www.ncbi.nlm.nih.gov/pubmed/36530261
http://dx.doi.org/10.1021/acsomega.2c05928

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9753640/
https://www.ncbi.nlm.nih.gov/pubmed/36530261
http://dx.doi.org/10.1021/acsomega.2c05928

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