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First-Principles Investigations of Thermoelectric Behavior of RuCrX (X = Si, Ge, Sn)
[Image: see text] The half-Heusler alloys have not only been recognized for spintronic and memory devices but also for thermoelectric applications. In this research work, the detailed study for thermoelectric parameters of RuCrX (X = Si, Ge, Sn) half-Heusler alloys has been carried out by using the...
Autores principales: | Asif, Muhammad, Alrashdi, Ayash O, Fadhali, Mohammed M., Afaq, A., Bakar, Abu |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9753640/ https://www.ncbi.nlm.nih.gov/pubmed/36530261 http://dx.doi.org/10.1021/acsomega.2c05928 |
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