Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

In this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf(0.5)Z(r0.5)O(2)) layer. Furthermore, the subthreshold characteristics of the devices with double gate modulation are inves...

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Detalles Bibliográficos
Autores principales: Zhang, Zhaohao, Li, Yudong, Xu, Jing, Tang, Bo, Xiang, Jinjuan, Li, Junjie, Zhang, Qingzhu, Wu, Zhenhua, Yin, Huaxiang, Luo, Jun, Wang, Wenwu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9755425/
https://www.ncbi.nlm.nih.gov/pubmed/36520242
http://dx.doi.org/10.1186/s11671-022-03767-4
Descripción
Sumario:In this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf(0.5)Z(r0.5)O(2)) layer. Furthermore, the subthreshold characteristics of the devices with double gate modulation are investigated extensively. Contributing to the advantages of the back-gate voltage coupling effects, the minimum subthreshold swing (SS) value of a 40 nm ETSOI device could be adjusted from the initial 80.8–50 mV/dec, which shows ultra-steep SS characteristics. To illustrate this electrical character, a simple analytical model based on the transient Miller model is demonstrated. This work shows the feasibility of FE ETSOI FET for ultra-low-power applications with dynamic threshold adjustment.

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