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Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications
Recent experiments suggest graphene-based materials as candidates for use in future electronic and optoelectronic devices. In this study, we propose a new multilayer quantum dot (QD) superlattice (SL) structure with graphene as the core and silicon (Si) as the shell of QD. The Slater–Koster tight-bi...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Higher Education Press
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756208/ https://www.ncbi.nlm.nih.gov/pubmed/36637679 http://dx.doi.org/10.1007/s12200-022-00043-2 |
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author | Sarkhoush, Masumeh Rasooli Saghai, Hassan Soofi, Hadi |
author_facet | Sarkhoush, Masumeh Rasooli Saghai, Hassan Soofi, Hadi |
author_sort | Sarkhoush, Masumeh |
collection | PubMed |
description | Recent experiments suggest graphene-based materials as candidates for use in future electronic and optoelectronic devices. In this study, we propose a new multilayer quantum dot (QD) superlattice (SL) structure with graphene as the core and silicon (Si) as the shell of QD. The Slater–Koster tight-binding method based on Bloch theory is exploited to investigate the band structure and energy states of the graphene/Si QD. Results reveal that the graphene/Si QD is a type-I QD and the ground state is 0.6 eV above the valance band. The results also suggest that the graphene/Si QD can be potentially used to create a sub-bandgap in all Si-based intermediate-band solar cells (IBSC). The energy level hybridization in a SL of graphene/Si QDs is investigated and it is observed that the mini-band formation is under the influence of inter-dot spacing among QDs. To evaluate the impact of the graphene/Si QD SL on the performance of Si-based solar cells, we design an IBSC based on the graphene/Si QD (QDIBSC) and calculate its short-circuit current density (J(sc)) and carrier generation rate (G) using the 2D finite difference time domain (FDTD) method. In comparison with the standard Si-based solar cell which records J(sc) = 16.9067 mA/cm(2) and G = 1.48943 × 10(28) m(−3)⋅s(−1), the graphene/Si QD IBSC with 2 layers of QDs presents J(sc) = 36.4193 mA/cm(2) and G = 7.94192 × 10(28) m(−3)⋅s(−1), offering considerable improvement. Finally, the effects of the number of QD layers (L) and the height of QD (H) on the performance of the graphene/Si QD IBSC are discussed. GRAPHICAL ABSTRACT: [Image: see text] |
format | Online Article Text |
id | pubmed-9756208 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Higher Education Press |
record_format | MEDLINE/PubMed |
spelling | pubmed-97562082023-01-06 Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications Sarkhoush, Masumeh Rasooli Saghai, Hassan Soofi, Hadi Front Optoelectron Research Article Recent experiments suggest graphene-based materials as candidates for use in future electronic and optoelectronic devices. In this study, we propose a new multilayer quantum dot (QD) superlattice (SL) structure with graphene as the core and silicon (Si) as the shell of QD. The Slater–Koster tight-binding method based on Bloch theory is exploited to investigate the band structure and energy states of the graphene/Si QD. Results reveal that the graphene/Si QD is a type-I QD and the ground state is 0.6 eV above the valance band. The results also suggest that the graphene/Si QD can be potentially used to create a sub-bandgap in all Si-based intermediate-band solar cells (IBSC). The energy level hybridization in a SL of graphene/Si QDs is investigated and it is observed that the mini-band formation is under the influence of inter-dot spacing among QDs. To evaluate the impact of the graphene/Si QD SL on the performance of Si-based solar cells, we design an IBSC based on the graphene/Si QD (QDIBSC) and calculate its short-circuit current density (J(sc)) and carrier generation rate (G) using the 2D finite difference time domain (FDTD) method. In comparison with the standard Si-based solar cell which records J(sc) = 16.9067 mA/cm(2) and G = 1.48943 × 10(28) m(−3)⋅s(−1), the graphene/Si QD IBSC with 2 layers of QDs presents J(sc) = 36.4193 mA/cm(2) and G = 7.94192 × 10(28) m(−3)⋅s(−1), offering considerable improvement. Finally, the effects of the number of QD layers (L) and the height of QD (H) on the performance of the graphene/Si QD IBSC are discussed. GRAPHICAL ABSTRACT: [Image: see text] Higher Education Press 2022-10-28 /pmc/articles/PMC9756208/ /pubmed/36637679 http://dx.doi.org/10.1007/s12200-022-00043-2 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Research Article Sarkhoush, Masumeh Rasooli Saghai, Hassan Soofi, Hadi Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications |
title | Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications |
title_full | Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications |
title_fullStr | Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications |
title_full_unstemmed | Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications |
title_short | Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications |
title_sort | design and simulation of type-i graphene/si quantum dot superlattice for intermediate-band solar cell applications |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9756208/ https://www.ncbi.nlm.nih.gov/pubmed/36637679 http://dx.doi.org/10.1007/s12200-022-00043-2 |
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