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Ultrafast response of spontaneous photovoltaic effect in 3R-MoS(2)–based heterostructures
Rhombohedrally stacked MoS(2) has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we s...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9757740/ https://www.ncbi.nlm.nih.gov/pubmed/36525495 http://dx.doi.org/10.1126/sciadv.ade3759 |
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author | Wu, Jingda Yang, Dongyang Liang, Jing Werner, Max Ostroumov, Evgeny Xiao, Yunhuan Watanabe, Kenji Taniguchi, Takashi Dadap, Jerry I. Jones, David Ye, Ziliang |
author_facet | Wu, Jingda Yang, Dongyang Liang, Jing Werner, Max Ostroumov, Evgeny Xiao, Yunhuan Watanabe, Kenji Taniguchi, Takashi Dadap, Jerry I. Jones, David Ye, Ziliang |
author_sort | Wu, Jingda |
collection | PubMed |
description | Rhombohedrally stacked MoS(2) has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show that the photovoltaic effect has an external quantum efficiency of 10% for devices with only two atomic layers of MoS(2) at low temperatures, and identify a picosecond-fast photocurrent response, which translates to an intrinsic device bandwidth at ∼100-GHz level. To this end, we have developed a nondegenerate pump-probe photocurrent spectroscopy technique to deconvolute the thermal and charge-transfer processes, thus successfully revealing the multicomponent nature of the photocurrent dynamics. The fast component approaches the limit of the charge-transfer speed at the graphene-MoS(2) interface. The remarkable efficiency and ultrafast photoresponse in the graphene-3R-MoS(2) devices support the use of ferroelectric van der Waals materials for future high-performance optoelectronic applications. |
format | Online Article Text |
id | pubmed-9757740 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-97577402022-12-27 Ultrafast response of spontaneous photovoltaic effect in 3R-MoS(2)–based heterostructures Wu, Jingda Yang, Dongyang Liang, Jing Werner, Max Ostroumov, Evgeny Xiao, Yunhuan Watanabe, Kenji Taniguchi, Takashi Dadap, Jerry I. Jones, David Ye, Ziliang Sci Adv Physical and Materials Sciences Rhombohedrally stacked MoS(2) has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show that the photovoltaic effect has an external quantum efficiency of 10% for devices with only two atomic layers of MoS(2) at low temperatures, and identify a picosecond-fast photocurrent response, which translates to an intrinsic device bandwidth at ∼100-GHz level. To this end, we have developed a nondegenerate pump-probe photocurrent spectroscopy technique to deconvolute the thermal and charge-transfer processes, thus successfully revealing the multicomponent nature of the photocurrent dynamics. The fast component approaches the limit of the charge-transfer speed at the graphene-MoS(2) interface. The remarkable efficiency and ultrafast photoresponse in the graphene-3R-MoS(2) devices support the use of ferroelectric van der Waals materials for future high-performance optoelectronic applications. American Association for the Advancement of Science 2022-12-16 /pmc/articles/PMC9757740/ /pubmed/36525495 http://dx.doi.org/10.1126/sciadv.ade3759 Text en Copyright © 2022 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY). https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution license (https://creativecommons.org/licenses/by/4.0/) , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Physical and Materials Sciences Wu, Jingda Yang, Dongyang Liang, Jing Werner, Max Ostroumov, Evgeny Xiao, Yunhuan Watanabe, Kenji Taniguchi, Takashi Dadap, Jerry I. Jones, David Ye, Ziliang Ultrafast response of spontaneous photovoltaic effect in 3R-MoS(2)–based heterostructures |
title | Ultrafast response of spontaneous photovoltaic effect in 3R-MoS(2)–based heterostructures |
title_full | Ultrafast response of spontaneous photovoltaic effect in 3R-MoS(2)–based heterostructures |
title_fullStr | Ultrafast response of spontaneous photovoltaic effect in 3R-MoS(2)–based heterostructures |
title_full_unstemmed | Ultrafast response of spontaneous photovoltaic effect in 3R-MoS(2)–based heterostructures |
title_short | Ultrafast response of spontaneous photovoltaic effect in 3R-MoS(2)–based heterostructures |
title_sort | ultrafast response of spontaneous photovoltaic effect in 3r-mos(2)–based heterostructures |
topic | Physical and Materials Sciences |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9757740/ https://www.ncbi.nlm.nih.gov/pubmed/36525495 http://dx.doi.org/10.1126/sciadv.ade3759 |
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