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Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe
Realizing high average thermoelectric figure of merit (ZT(ave)) and power factor (PF(ave)) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT(ave) and PF(ave) in n‐type PbSe. The nonstoichiom...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9762289/ https://www.ncbi.nlm.nih.gov/pubmed/36285809 http://dx.doi.org/10.1002/advs.202203782 |
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author | Ge, Bangzhi Lee, Hyungseok Huang, Lulu Zhou, Chongjian Wei, Zhilei Cai, Bowen Cho, Sung‐Pyo Li, Jing‐Feng Qiao, Guanjun Qin, Xiaoying Shi, Zhongqi Chung, In |
author_facet | Ge, Bangzhi Lee, Hyungseok Huang, Lulu Zhou, Chongjian Wei, Zhilei Cai, Bowen Cho, Sung‐Pyo Li, Jing‐Feng Qiao, Guanjun Qin, Xiaoying Shi, Zhongqi Chung, In |
author_sort | Ge, Bangzhi |
collection | PubMed |
description | Realizing high average thermoelectric figure of merit (ZT(ave)) and power factor (PF(ave)) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT(ave) and PF(ave) in n‐type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb(1+) (x) Se(0.8)Te(0.2) (x = 0–0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (µ (H)) and concentration (n (H)) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (σ). Second, modifying charge scattering mechanism by the authors’ synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between n (H) and µ (H); and σ and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PF(ave) ≈20 µW cm(−1) K(−2) from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZT(ave) of ≈1.2 from 400 to 823 K, one of the highest reported for all n‐type PbQ (Q = chalcogens) materials. |
format | Online Article Text |
id | pubmed-9762289 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-97622892022-12-20 Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe Ge, Bangzhi Lee, Hyungseok Huang, Lulu Zhou, Chongjian Wei, Zhilei Cai, Bowen Cho, Sung‐Pyo Li, Jing‐Feng Qiao, Guanjun Qin, Xiaoying Shi, Zhongqi Chung, In Adv Sci (Weinh) Research Articles Realizing high average thermoelectric figure of merit (ZT(ave)) and power factor (PF(ave)) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT(ave) and PF(ave) in n‐type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb(1+) (x) Se(0.8)Te(0.2) (x = 0–0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (µ (H)) and concentration (n (H)) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (σ). Second, modifying charge scattering mechanism by the authors’ synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between n (H) and µ (H); and σ and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PF(ave) ≈20 µW cm(−1) K(−2) from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZT(ave) of ≈1.2 from 400 to 823 K, one of the highest reported for all n‐type PbQ (Q = chalcogens) materials. John Wiley and Sons Inc. 2022-10-26 /pmc/articles/PMC9762289/ /pubmed/36285809 http://dx.doi.org/10.1002/advs.202203782 Text en © 2022 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Articles Ge, Bangzhi Lee, Hyungseok Huang, Lulu Zhou, Chongjian Wei, Zhilei Cai, Bowen Cho, Sung‐Pyo Li, Jing‐Feng Qiao, Guanjun Qin, Xiaoying Shi, Zhongqi Chung, In Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe |
title | Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe |
title_full | Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe |
title_fullStr | Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe |
title_full_unstemmed | Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe |
title_short | Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe |
title_sort | atomic level defect structure engineering for unusually high average thermoelectric figure of merit in n‐type pbse rivalling pbte |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9762289/ https://www.ncbi.nlm.nih.gov/pubmed/36285809 http://dx.doi.org/10.1002/advs.202203782 |
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