An epitaxial graphene platform for zero-energy edge state nanoelectronics

Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide...

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Detalles Bibliográficos
Autores principales: Prudkovskiy, Vladimir S., Hu, Yiran, Zhang, Kaimin, Hu, Yue, Ji, Peixuan, Nunn, Grant, Zhao, Jian, Shi, Chenqian, Tejeda, Antonio, Wander, David, De Cecco, Alessandro, Winkelmann, Clemens B., Jiang, Yuxuan, Zhao, Tianhao, Wakabayashi, Katsunori, Jiang, Zhigang, Ma, Lei, Berger, Claire, de Heer, Walt A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9763431/
https://www.ncbi.nlm.nih.gov/pubmed/36535919
http://dx.doi.org/10.1038/s41467-022-34369-4

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