The growth mechanism and intriguing optical and electronic properties of few-layered HfS(2)

Due to electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB (Hf and Zr) TMDs have become intriguing materials in next-generation nanoelectronics. Therefore, the growth of few-layered hafnium disulfide (HfS(2)) on c-plane sapphire as well as on a S...

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Detalles Bibliográficos
Autores principales: Singh, Jitendra, Shao, Jia-Hui, Chen, Guan-Ting, Wu, Han-Song, Tsai, Meng-Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9765574/
https://www.ncbi.nlm.nih.gov/pubmed/36605793
http://dx.doi.org/10.1039/d2na00578f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9765574/
https://www.ncbi.nlm.nih.gov/pubmed/36605793
http://dx.doi.org/10.1039/d2na00578f

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