Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors

This work investigates the impacts of structural parameters on the performances of p-GaN/AlGaN/GaN HEMT-based ultraviolet (UV) phototransistors (PTs) using Silvaco Atlas. The simulation results show that a larger Al content or greater thickness for the AlGaN barrier layer can induce a higher two-dim...

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Detalles Bibliográficos
Autores principales: Wang, Haiping, You, Haifan, Yang, Jiangui, Yang, Minqiang, Wang, Lu, Zhao, Hong, Xie, Zili, Chen, Dunjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9780832/
https://www.ncbi.nlm.nih.gov/pubmed/36557510
http://dx.doi.org/10.3390/mi13122210

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9780832/
https://www.ncbi.nlm.nih.gov/pubmed/36557510
http://dx.doi.org/10.3390/mi13122210

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