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Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled
SiO(2) etching characteristics were investigated in detail. Patterned SiO(2) was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bi...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9781520/ https://www.ncbi.nlm.nih.gov/pubmed/36558310 http://dx.doi.org/10.3390/nano12244457 |
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author | Jeong, Won-nyoung Lee, Young-seok Cho, Chul-hee Seong, In-ho You, Shin-jae |
author_facet | Jeong, Won-nyoung Lee, Young-seok Cho, Chul-hee Seong, In-ho You, Shin-jae |
author_sort | Jeong, Won-nyoung |
collection | PubMed |
description | SiO(2) etching characteristics were investigated in detail. Patterned SiO(2) was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bias voltage) were also measured. In this work, we identified an etching process window, where the etching depth is a function of the radical flux. Then, pulse-off time was varied in the two extreme cases: the lowest and the highest radical fluxes. It was observed that increasing pulse-off time resulted in an enhanced etching depth and the reduced etching depth respectively. This opposing trend was attributed to increasing neutral to ion flux ratio by extending pulse-off time within different etching regimes. |
format | Online Article Text |
id | pubmed-9781520 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-97815202022-12-24 Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled Jeong, Won-nyoung Lee, Young-seok Cho, Chul-hee Seong, In-ho You, Shin-jae Nanomaterials (Basel) Article SiO(2) etching characteristics were investigated in detail. Patterned SiO(2) was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bias voltage) were also measured. In this work, we identified an etching process window, where the etching depth is a function of the radical flux. Then, pulse-off time was varied in the two extreme cases: the lowest and the highest radical fluxes. It was observed that increasing pulse-off time resulted in an enhanced etching depth and the reduced etching depth respectively. This opposing trend was attributed to increasing neutral to ion flux ratio by extending pulse-off time within different etching regimes. MDPI 2022-12-15 /pmc/articles/PMC9781520/ /pubmed/36558310 http://dx.doi.org/10.3390/nano12244457 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Jeong, Won-nyoung Lee, Young-seok Cho, Chul-hee Seong, In-ho You, Shin-jae Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled |
title | Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled |
title_full | Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled |
title_fullStr | Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled |
title_full_unstemmed | Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled |
title_short | Investigation into SiO(2) Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled |
title_sort | investigation into sio(2) etching characteristics using fluorocarbon capacitively coupled plasmas: etching with radical/ion flux-controlled |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9781520/ https://www.ncbi.nlm.nih.gov/pubmed/36558310 http://dx.doi.org/10.3390/nano12244457 |
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