Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications

Thanks to high-current densities and cutoff frequencies, short-channel length AlGaN/GaN HEMTs are a promising technology solution for implementing RF power amplifiers in 5G front-end modules. These devices, however, might suffer from current collapse due to trapping effects, leading to compressed ou...

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Detalles Bibliográficos
Autores principales: Zagni, Nicolò, Verzellesi, Giovanni, Chini, Alessandro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782106/
https://www.ncbi.nlm.nih.gov/pubmed/36557543
http://dx.doi.org/10.3390/mi13122244

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782106/
https://www.ncbi.nlm.nih.gov/pubmed/36557543
http://dx.doi.org/10.3390/mi13122244

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