X-ray-Induced Scintillation Properties of Nd-Doped Bi(4)Si(3)O(12) Crystals in Visible and Near-Infrared Regions

Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi(4)Si(3)O(12) (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p–6s transitions of Bi(3+) ions. In addition, the Nd-doped samples had emission peaks due to the 4f–4f transitions of Nd(3+) ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples.