Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer

The SrZrTiO(3) (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film...

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Detalles Bibliográficos
Autores principales: Lee, Ke-Jing, Lin, Wei-Shao, Wang, Li-Wen, Lin, Hsin-Ni, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782405/
https://www.ncbi.nlm.nih.gov/pubmed/36558265
http://dx.doi.org/10.3390/nano12244412
Descripción
Sumario:The SrZrTiO(3) (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 10(7), lower operation voltage (V(SET) = −0.8 V and V(RESET) = 2.05 V), uniform film, and device stability of more than 10(5) s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.

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